![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Description
1N1183 thru 1N1187R. 1N1187 (R). 200. 140. 1N1186 (R). Maximum ratings, at Tj = 25 C, unless otherwise specified. 2. Reverse polarity (R): Stud is anode. 1N1183 thru 1N1187R. 1N1187 (R). 200. 1N1186 (R). Maximum ratings, at Tj = 25 C, unless otherwise specified. Silicon Standard. Recovery Diode. Conditions. 1N1183A thru 1N1190AR. 200. 1N1186 (R). Maximum ratings, at Tj = 25 C, unless otherwise specified. Silicon Standard. Recovery Diode. Conditions voltage. VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com. Vishay Semiconductors. Revision: 18-May-15. 1. Document Number: 93492. Part number: 1N1186 , Key parameters: Is=1.2847E-13. Tt=1E-07. ap_dio_1N1187_19930601. Manufacturer: International_Rectifier, Basic Description: Diode,.
Part Number | 1N1186 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 200V 35A DO5 |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 35A |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 35A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 50V |
Capacitance @ Vr, F | - |
Mounting Type | Chassis, Stud Mount |
Package / Case | DO-203AB, DO-5, Stud |
Supplier Device Package | DO-5 |
Operating Temperature - Junction | -65°C ~ 190°C |
Image | ![]() |
1N1186
MICROCIHIP
50165
0.81
Ysx Tech Co., Limited
1N1186
MICROCH
43
2.1075
KYO Inc.
1N1186
MICRCHIP
3080
3.405
ZHW High-tech (HK) Co., Limited
1N1186
MICORCHIP
1700
4.7025
WALTON ELECTRONICS CO., LIMITED
1N1186
MICRONCHIP
8313
6
Viassion Technology Co., Limited