Part Number | 1N5807US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 50V 3A B-MELF |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 50V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
1N5807US
MICROCIHIP
3024
0.71
YO CHIP(HONG KONG)TRADING CO LIMITED
1N5807US
MICROCH
8530
1.7875
KYO Inc.
1N5807US
MICRCHIP
6796
2.865
DXWAY TECHNOLOGY CO., LIMITED
1N5807US
MICORCHIP
9101
3.9425
BeiJing Daruitong Components Co.,Ltd
1N5807US
MICRONCHIP
5308
5.02
HK Niuhuasi Technology Limited