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Part Number | 1N5809US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 100V 3A B-MELF |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 100V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Image | ![]() |
1N5809US
MICROCIHIP
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1.78
Hongkong Yunling Electronics Co.,Limited
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346000
2.5975
Shenzhen WTX Capacitor Co., Ltd.
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18000
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8426
4.2325
Viassion Technology Co., Limited
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11724
5.05
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