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Description
DATASHEET The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement- mode silicon MOSFET, manufactured by the N-Channel DMOS Process,. The CP361X- CEDM7001 is a silicon N-Channel enhancement-mode MOSFET die process designed for high speed pulsed amplifier and driver applications. ultra miniature SOT-883L package. The Central Semiconductor CEDM7001 (N- Channel) and complementary CEDM8001 (P-Channel) are single 20V, 100mA. Sample request link: www.centralsemi.com/info/ CEDM7001 . Product information link: www.centralsemi.com/product/ CEDM7001 . N-Channel and P-Channel Hauppauge, NY USA August 10, 2010 Central Semiconductor Corp. announces the CEDM7001 . (N-Channel) and complementary CEDM8001 (P- Channel)
| Part Number | CEDM7001 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Microchip |
| Description | MOSFET N-CH 20V 0.1A SOT-883 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.57nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 9pF @ 3V |
| Vgs (Max) | 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW (Ta) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 10mA, 4V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-883 |
| Package / Case | SC-101, SOT-883 |
| Image |  |
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