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Description
1N4150 www.vishay.com. Vishay Semiconductors. Rev. 1.8, 05-Dec-13. 1. Document Number: 85522. For technical questions within your region: 1. Revision Date: 12/7/2009. New Product. Silicon Switching Diodes. 1N4150 , 1N4150 -1 & 1N3600. Maximum Ratings. Operating & Storage Temperature: 1N4150 . 1N4607. Note 1: Per Method 4031-A with IF = 10 mA,Vr = 6 V, RL = 100 Ohms. * UNLESS OTHERWISE SPECIFIED. Reverse Recovery time (note 1) trr. Dec 31, 2000 30-06-01. 31-12-01. Vishay : 1N4150 , Rohm : 1N4150 Standard End of Life, Consult Marketing. 5 1N4150 . High-speed diode. 933121460133. Apr 21, 2009 CPD41-CMPD4150-WS. CPD41-CMPD914-WN. CPD41-1N3600-WN. CPD41- 1N4148-CT. CPD41- 1N4150 -CT. CPD41- 1N4150 -WN.
| Part Number | 1N4150 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Microchip |
| Description | DIODE GEN PURP 50V 200MA DO35 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 200mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 6ns |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Image |  |
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