Part Number | 1N5811US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 150V 3A B-MELF |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 50V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
1N5811US
MICROCIHIP
8232
0.34
N&S Electronic Co., Limited
1N5811US
MICROCH
4970
1.5075
LvangChip(HongKong)Co.,Limited
1N5811US
MICRCHIP
1077
2.675
C & I Semiconductors Co., Limited
1N5811US
MICORCHIP
6148
3.8425
Bonase Electronics (HK) Co., Limited
1N5811US
MICRONCHIP
5194
5.01
Bonase Electronics (HK) Co., Limited