(5/5) based on 4 customer reviews
Description
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic. Symbol. 1N5817. 1N5818. 1N5819 . Unit. Jul 4, 2011 1N5817, 1N5818, 1N5819 . Low drop power Schottky rectifier. Features. Very small conduction losses. Negligible switching losses. Revision: 20-Oct-09. DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com. 1. Schottky Barrier Rectifier. 1N5817 thru 1N5819 . 1N5817, 1N5818, 1N5819 . 1N5817 and 1N5819 are Preferred Devices. Axial Lead Rectifiers. This series employs the Schottky Barrier principle in a large area. The VS- 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in
| Part Number | 1N5819 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Microchip |
| Description | DIODE SCHOTTKY 40V 1A DO41 |
| Series | - |
| Packaging | Tape & Box (TB) |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 550mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 40V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | 150°C (Max) |
| Image |  |
Hot Offer
1N5819
MICROCIHIP
2888
0.2
BOYU ELECTRONIC TECHNOLOGY LIMITED
1N5819
MICROCH
2888
0.8825
JINRUIXIN TECHNOLOGY (HONG KONG) LIMITED
1N5819
MICRCHIP
2888
1.565
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
1N5819
MICORCHIP
2888
2.2475
Xinyihui Electronic Technology Limited
1N5819(SS14)
MICRONCHIP
30000
2.93
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED
