Description
DIODE GEN PURP 660V 1.2A A-MELF Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65~C ~ 150~C
Part Number | 1N6622US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 660V 1.2A A-MELF |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 660V |
Current - Average Rectified (Io) | 1.2A |
Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1.2A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 500nA @ 660V |
Capacitance @ Vr, F | 10pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | A-MELF |
Operating Temperature - Junction | -65°C ~ 150°C |
Image |
1N6622US
MICROCIHIP
20000
0.64
Xinghuan International Trade Limited
1N6622US
MICROCH
754
1.335
ABBI Electronics Company Limited
1N6622US
MICRCHIP
2622
2.03
Yingxinyuan INT'L (Group) Limited
1N6622US
MICORCHIP
744
2.725
WIN AND WIN ELECTRONICS LIMITED
1N6622US
MICRONCHIP
562
3.42
HK TWO L ELECTRONIC LIMITED