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Description
DATASHEET The CENTRAL SEMICONDUCTOR 2N1711 is a silicon. NPN epitaxial planar transistor designed for small signal general purpose switching applications. 2N1711 . NPN AMPL/SWITCH 75. 50. 7.0. 0.10. 60. 100 300 150. 10. 1.00. 150. 70. 25. - - - - - -. 2N1711B NPN AMPL/SWITCH 120. 50. 7.0. 0.10. 60. 100 300 WINDOW. COMPARATOR. Q1. TMP01. R1. R2. R3. V+. 4.7k . 2N1711 . IC. 00. 33. 3-02. 2. TEMPERATURE. SENSOR AND. VOLTAGE. REFERENCE. VREF. P2*. 4mA. ADJUST. D1. R4*. R6. 100k. P1*. 20mA. ADJUST. GND. Q1. 2N1711 . 0.1 F. 2. 4. 6. 3V. IL. Figure 10. A Temperature to 4-to-20 mA Loop Transmitter GND. Q1. 2N1711 . 0.1 F. 2. 4. 6. 3V. IL. NOTE: 1 SEE TEXT FOR VALUES. . +. 00. 33. 7-03. 2. +. OP193. Figure 33. Temperature to 4 20 mA Loop Transmitter.
| Part Number | 2N1711 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Microchip |
| Description | TRANS NPN 50V 0.5A TO-39 |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 800mW |
| Frequency - Transition | 70MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Image |  |
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