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Description
1. Publication Order Number: 2N2905A /D. 2N2905A . Small Signal Switching. Transistor. PNP Silicon. Features. MIL PRF 19500/290 Qualified. Available as The 2N2905A and 2N2907A are silicon Planar. Epitaxial PNP transistors in Jedec TO-39 (for. 2N2905A ) and in Jedec TO-18 (for 2N2907A) metal case. They are 2N2905A TO-5 are silicon PNP transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. CP591X- 2N2905A . PNP - General Purpose Transistor Die. 0.6 Amp, 60 Volt. Die Size. 19.3 x 19.3 MILS. Die Thickness. 5.9 MILS. Base Bonding Pad Size. Jan 1, 2011 2N2905A . PNP General. Purpose Amplifier. )HDWXUHV. . General-purpose Transistor for Switching and Amplifier. Applications. . Housed in a
| Part Number | 2N2905A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Microchip |
| Description | TRANS PNP 60V 0.6A TO-39 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 600mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Image |  |
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