Description
2N3019 , 2N3019S, 2N3700. Low Power Transistors. NPN Silicon. Features. MIL PRF 19500/391 Qualified. Available as JAN, JANTX, and JANTXV. 2N3019 . SMALL SIGNAL NPN TRANSISTOR. DESCRIPTION. The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed. The CENTRAL SEMICONDUCTOR 2N3019 , 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL CP305- 2N3019 . NPN - High Current Transistor Die. Die Size. 31 x 31 MILS. Die Thickness. 9.0 MILS. Base Bonding Pad Size. 5.9 x 11.8 MILS. Emitter Bonding 2N3019 . CMPT3019. CXT3019. CZT3019. GROSS DIE PER 4 INCH WAFER. 11,212. PROCESS CP305. Small Signal Transistor. NPN - High Current Transistor
Part Number | 2N3019 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Microchip |
Description | TRANS NPN 80V 1A TO-5 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
Power - Max | 800mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Image |
2N3019
MICROCIHIP
10
0.79
H.X.Y ELECTRONIC HK LIMITED
2N3019
MICROCH
100000
1.8475
VBsemi Electronics Co., Limited
2N3019
MICRCHIP
860
2.905
FLOWER GROUP(HK)CO.,LTD
2N3019
MICORCHIP
15000
3.9625
Junzhan Electronic (HK) Limited
2N3019
MICRONCHIP
12
5.02
Antony Electronic Ltd.