Description
2N3055 /D. 2N3055 (NPN), MJ2955(PNP). Preferred Device. Complementary Silicon. Power Transistors. Complementary silicon power transistors aredesigned MAXIMUM RATINGS: (TC=25 C). SYMBOL. UNITS. Collector-Base Voltage. VCBO. 100. V. Collector-Emitter Voltage. VCER. 70. V. Collector-Emitter Voltage. Nov 11, 2013 DocID4079 Rev 8. 1/7. 2N3055 ,. MJ2955. Complementary power transistors. Datasheet - production data. Figure 1. Internal schematic diagram. 2N3055 . 1 1. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high
Part Number | 2N3055 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Microchip |
Description | TRANS NPN 60V 15A TO-3 |
Series | - |
Packaging | Tray |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 15A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A |
Current - Collector Cutoff (Max) | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
Power - Max | 115W |
Frequency - Transition | - |
Operating Temperature | 200°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
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