Part Number | APT11N80BC3G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 800V 11A TO-247 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 680µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1585pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 7.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 [B] |
Package / Case | TO-247-3 |
Image |
APT11N80BC3
MICROCIHIP
4504
1.26
Dedicate Electronics (HK) Limited
APT11N80KC3G
MICROCH
1376
2.175
Cicotex Electronics (HK) Limited
APT11N80BC3
MICRCHIP
507
3.09
HK SEN YING TAI TECHNOLOGY CO., LIMITED