Part Number | APT25GP90BDQ1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microchip |
Description | IGBT 900V 72A 417W TO247 |
Series | POWER MOS 7 |
Packaging | Tube |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 900V |
Current - Collector (Ic) (Max) | 72A |
Current - Collector Pulsed (Icm) | 110A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
Power - Max | 417W |
Switching Energy | 370µJ (off) |
Input Type | Standard |
Gate Charge | 110nC |
Td (on/off) @ 25°C | 13ns/55ns |
Test Condition | 600V, 40A, 4.3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Image |
APT25GP90BDQ1G
MICROCIHIP
16000
0.95
Finestock Electronics HK Limited
APT25GP90BDQ1G
MICROCH
5504
1.4875
Heisener Electronics Limited
APT25GP90BDQ1G
MICRCHIP
50000
2.025
Hongkong Shengshi Electronics Limited
APT25GP90BDQ1G
MICORCHIP
151760
2.5625
Cicotex Electronics (HK) Limited
APT25GP90BDQ1G
MICRONCHIP
27930
3.1
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED