Part Number | APT28M120B2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 1200V 29A T-MAX |
Series | POWER MOS 8 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9670pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1135W (Tc) |
Rds On (Max) @ Id, Vgs | 560 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | T-MAX,[B2] |
Package / Case | TO-247-3 Variant |
Image |
APT28M120B2
MICROCIHIP
7726
1.28
Heisener Electronics Limited
APT28M120B2
MICROCH
764
2.2375
Finestock Electronics HK Limited
APT28M120B2
MICRCHIP
1164
3.195
ATLANTIC TECHNOLOGY LIMITED
APT28M120B2
MICORCHIP
3874
4.1525
Cicotex Electronics (HK) Limited
APT28M120B2
MICRONCHIP
8147
5.11
FLOWER GROUP(HK)CO.,LTD