Part Number | APT31M100B2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 1000V 32A T-MAX |
Series | POWER MOS 8 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1040W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | T-MAX,[B2] |
Package / Case | TO-247-3 Variant |
Image |
APT31M100B2
MICROCIHIP
118
0.94
ZHW High-tech (HK) Co., Limited
APT31M100B2
MICROCH
1000
2.06
MY Group (Asia) Limited
APT31M100B2
MICRCHIP
20000
3.18
Ande Electronics Co., Limited
APT31M100L
MICORCHIP
18000
4.3
MY Group (Asia) Limited
APT31M100L
MICRONCHIP
20000
5.42
Ande Electronics Co., Limited