Part Number | APT34N80B2C3G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 800V 34A T-MAX |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 355nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4510pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 417W (Tc) |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 22A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | T-MAX,[B2] |
Package / Case | TO-247-3 Variant |
Image |
APT34N80B2C3G
MICROCIHIP
4800
1.68
SUNTOP SEMICONDUCTOR CO., LIMITED
APT34N80B2C3G
MICROCH
1952
2.5175
HK HEQING ELECTRONICS LIMITED
APT34N80B2C3G
MICRCHIP
22358
3.355
Shenzhen Aric Electronics Company
APT34N80B2C3G
MICORCHIP
1000
4.1925
WIN AND WIN ELECTRONICS LIMITED
APT34N80B2C3G
MICRONCHIP
35150
5.03
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED