Part Number | APT45GP120B2DQ2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microchip |
Description | IGBT 1200V 113A 625W TMAX |
Series | POWER MOS 7 |
Packaging | Tube |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 113A |
Current - Collector Pulsed (Icm) | 170A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
Power - Max | 625W |
Switching Energy | 900µJ (on), 905µJ (off) |
Input Type | Standard |
Gate Charge | 185nC |
Td (on/off) @ 25°C | 18ns/100ns |
Test Condition | 600V, 45A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Image |
APT45GP120B2DQ2G
MICROCIHIP
1739
0.02
Ysx Tech Co., Limited
APT45GP120B2DQ2G
MICROCH
1708
1.02
Bonase Electronics (HK) Co., Limited
APT45GP120B2DQ2G
MICRCHIP
9780
2.02
Yingxinyuan INT'L (Group) Limited
APT45GP120B2DQ2G
MICORCHIP
3090
3.02
HK Niuhuasi Technology Limited
APT45GP120B2DQ2G
MICRONCHIP
4621
4.02
CIS Ltd (CHECK IC SOLUTION LIMITED)