Part Number | APT65GP60B2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microchip |
Description | IGBT 600V 100A 833W TMAX |
Series | POWER MOS 7 |
Packaging | Tube |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 250A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
Power - Max | 833W |
Switching Energy | 605µJ (on), 896µJ (off) |
Input Type | Standard |
Gate Charge | 210nC |
Td (on/off) @ 25°C | 30ns/91ns |
Test Condition | 400V, 65A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Image |
APT65GP60B2G
MICROCIHIP
119
1.37
Southern Electronics Tech Limited
APT65GP60B2G
MICROCH
5000
2.1975
HITO TECHNOLOGY LIMITED
APT65GP60B2G
MICRCHIP
18000
3.025
HK Niuhuasi Technology Limited
APT65GP60B2G
MICORCHIP
82
3.8525
Yingxinyuan INT'L (Group) Limited
APT65GP60B2G
MICRONCHIP
11001
4.68
Ande Electronics Co., Limited