Description
MOSFET 4N-CH 1000V 22A SP3 Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25~C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40~C ~ 150~C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3
Part Number | APTM100H35FT3G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Microchip |
Description | MOSFET 4N-CH 1000V 22A SP3 |
Series | - |
Packaging | Bulk |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 22A |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
Power - Max | 390W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Supplier Device Package | SP3 |
Image |
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