Description
DATASHEET Jul 7, 2016 FDMS86202 . PQFN-8. (BWAu_S_G_clip). Jul 07, 2016. 1.0. FSCP. 0.122147 g. Each. Manufacturing Process Information. Terminal Finish. Jul 7, 2016 FDMS86202 . PQFN-8 (BWAu_S_G_clip). FSCP. FSCP. 0.122147. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. 4.85m . 120V FDMS86202 . 7.2m . 150V FDMS86255. 12.4m . Fairchilds complete portfolio for primary side, secondary side and non-isolated DC-DC FDMS86202 . MOSFET N-ch 120V 64A. 7.2mOhm Power-56 SMT. Fairchild. FDMS86202 . 1 Q3. FDMS86101. MOSFET N-CH 100V. 8mOhm Power-56 SMT.
Part Number | FDMS86202 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 120V 8MLP |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4250pF @ 60V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 13.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Power56 |
Package / Case | 8-PowerTDFN |
Image |
FDMS86202
MICROCIHIP
3000
1.37
Shenzhen Qiangneng Electronics Co., Ltd.
FDMS86202
MICROCH
35800
2.2975
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDMS86202
MICRCHIP
6000
3.225
ZY (HK) TECHNOLOGY LIMITED
FDMS86202
MICORCHIP
5000000
4.1525
Hongkong Shengshi Electronics Limited
FDMS86202
MICRONCHIP
5200
5.08
FLOWER GROUP(HK)CO.,LTD