Part Number | FDN5618P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET P-CH 60V 1.25A SSOT3 |
Series | PowerTrench |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
FDN5618P
MICROCIHIP
5793
1.05
Kunlida Electronics (HK) Limited
FDN5618P
MICROCH
4553
2.08
BOYU ELECTRONIC TECHNOLOGY LIMITED
FDN5618P
MICRCHIP
5732
3.11
ACHIEVE ELECTRONICS CO., LIMITED
FDN5618P
MICORCHIP
1774
4.14
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
FDN5618P
MICRONCHIP
9344
5.17
Semic Pte. Ltd