Rated 
(4/5) based on 12 customer reviews
(4/5) based on 12 customer reviews
Description
Oct 1, 2013 40. Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol. Parameter. FQB27P06TM . Unit. VDSS. Drain-Source Voltage. -60. Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQB27P06TM . FQB27P06TM . TO263-2. (NiLFAlBW). Jul 14, 2015 FQB27P06TM . TO263-2 (NiLFAlBW). FSSZ. FSSZ. 1.485898. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp.
| Part Number | FQB27P06TM |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Microchip |
| Description | MOSFET P-CH 60V 27A D2PAK |
| Series | QFET |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 13.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263AB) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
Lowest Price: $0.51
Highest Price: $4.19
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BOYU ELECTRONIC TECHNOLOGY LIMITED
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New Star Advance Co., Limited
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SUNTOP SEMICONDUCTOR CO., LIMITED
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Part Number:
FQB27P06TM
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MICROCH
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Company:
Shenzhen Weisheng Century Technology Co., Ltd
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FQB27P06TM
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MICRCHIP
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Belt (HK) Electronics Co
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FQB27P06TM Ref.
[hkinmicrochip20220920][hkinbrandcloudAMpd]
