Microchip

Description

Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration test pulse used to minimize self-heating effect. 3. Measured at This series employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in Jul 4, 2011 Axial Power Schottky rectifier suited for Switch. Mode Power Supplies and high frequency DC to. DC converters. Packaged in DO-41 these The NCP1403 is a monolithic PFM step-up DC-DC converter. This device is designed to boost a single Lithium or two cell AA/AAA battery voltage up to 15 V