Microchip

Description

Guard Ring Die Construction for Transient Protection. . Low Power Loss, High Efficiency. . High Surge Capability. . High Current Capability and Low Forward This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial Value. Unit. 1N5820 1N5821 1N5822. VRRM. Repetitive peak reverse voltage. 20. 30. 40. V. IF(RMS). RMS forward current. 10. A. IF(AV). Average forward Page 1. Document Number: 88526. For technical questions within your region, please contact one of the following: www.vishay.com. Revision: 20-Oct-09. Page 1. SENSITRON. SEMICONDUCTOR. Power Management, Technology & Innovation. Commercial Products. Selector Guide. Power Rectifiers.