Part Number | IPD60R600P7ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 650V 6A TO252-3 |
Series | CoolMOS,P7 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 363pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 1.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R600P7ATMA1
MICROCIHIP
503
1.04
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
IPD60R600P7ATMA1
MICROCH
4026
1.995
Asia Pacific component (Hong Kong) Ltd.
IPD60R600P7ATMA1
MICRCHIP
7005
2.95
Finestock Electronics HK Limited
IPD60R600P7ATMA1
MICORCHIP
8786
3.905
Shine Ever (Hong Kong) Co,.Ltd
IPD60R600P7ATMA1
MICRONCHIP
5325
4.86
Hongkong Shengshi Electronics Limited