Part Number | IPD60R650CEATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 600V TO-252-3 |
Series | CoolMOS,CE |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.4A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R650CEATMA1
MICROCIHIP
6019
1.02
Finestock Electronics HK Limited
IPD60R650CEATMA1
MICROCH
316
1.27
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R650CEATMA1
MICRCHIP
9315
1.52
Cinty Int'l (HK) Industry Co., Limited
IPD60R650CEATMA1
MICORCHIP
8507
1.77
Honestwin Technology Co., Limited
IPD60R650CEATMA1
MICRONCHIP
6005
2.02
Yingxinyuan INT'L (Group) Limited