Part Number | IPW60R280E6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 600V 13.8A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 430µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW60R280E6
MICROCIHIP
5830
1.03
Useta Tech (HK) Limited
IPW60R280E6
MICROCH
4599
1.8
HK HEQING ELECTRONICS LIMITED
IPW60R280E6
MICRCHIP
5132
2.57
Shenzhen Tecrutter Technology Co. , Ltd.
IPW60R280E6
MICORCHIP
4967
3.34
KWANGHUA TECHNOLOGY LIMITED
IPW60R280E6
MICRONCHIP
5486
4.11
ANCHIP TECHNOLOGY CO., LIMITED