(5/5) based on 14 customer reviews
Description
DATASHEET Jan 20, 2012 Avalanche SOA l Enhanced body diode dV/dt and dI/dt. Capability www.irf.com. 1 . IRFB3607PbF . IRFS3607PbF. IRFSL3607PbF. Applications. IRFB3207ZPBF. IR. 0. Q4, Q5, Q6. MOSFET, Nchan, Pattern only. TO-220AB. 1. Q7. IRFB3607PBF . MOSFET, Nchan, 75V, 80A, 9 m . TO-220AB. IRFB3607PBF . IRFS3307zPBF. IRFH5007TRPBF. 8.5. IRFH7107TRPBF. 8.8. IRFB3507PBF. IRFSL3507PBF. IRFS3507PBF. 9. IRFB3607PBF . IRFSL3607PBF. IRFS3607PBF. T0-220. IRFP3077PBF. 75. 3.3. 210. 160. T0-247. IRF2907ZS-7PPBF. 75. 3.8. 180. 170. D2PAK-7. IRFS3207ZPBF. 75. 4.1. 170. 120. D2PAK. IRFB3607PBF . 75. 2.0. 75V. 5-20. IRF6646TRPBF. 9.5. IRFH5207TRPBF. 9.6. IRFR2607ZPBF. 22.0. IRFS3607PBF. 9.0. IRFB3607PBF . 9.0. IRFH7107TRPBF. 8.5. IRFR2307ZPBF.
| Part Number | IRFB3607PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Microchip |
| Description | MOSFET N-CH 75V 80A TO-220AB |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 46A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
Hot Offer
IRFB3607PBF
MICROCIHIP
20000
0.29
Superior Electronics Limited
IRFB3607PBF
MICROCH
204000
1.42
Hong Kong Capital Industrial Co.,Ltd
IRFB3607PBF
MICRCHIP
10000
2.55
ACHIEVE ELECTRONICS CO., LIMITED
IRFB3607PBF
MICORCHIP
5200
3.68
Shenzhen zhuotaifeng Technology Co., Ltd
IRFB3607PBF
MICRONCHIP
250000
4.81
HEXING TECHNOLOGY (HK) LIMITED
