Part Number | JANTXV1N5809US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 100V 3A B-MELF |
Series | Military, MIL-PRF-19500/477 |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 100V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
JANTXV1N5809US
MICROCIHIP
9275
0.64
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
JANTXV1N5809US
MICROCH
604
1.4875
N&S Electronic Co., Limited
JANTXV1N5809US
MICRCHIP
7989
2.335
HK FEILIDI ELECTRONIC CO., LIMITED
JANTXV1N5809US
MICORCHIP
3976
3.1825
DXWAY TECHNOLOGY CO., LIMITED
JANTXV1N5809US
MICRONCHIP
5521
4.03
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED