Description
DIODE GEN PURP 150V 3A B-MELF Series: Military, MIL-PRF-19500/477 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65~C ~ 175~C
Part Number | JANTXV1N5811US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microchip |
Description | DIODE GEN PURP 150V 3A B-MELF |
Series | Military, MIL-PRF-19500/477 |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 150V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
JANTXV1N5811US
MICROCIHIP
12336
1.05
N&S Electronic Co., Limited
JANTXV1N5811US
MICROCH
2620
1.7325
ALLCHIPS ELECTRONICS LIMITED
JANTXV1N5811US
MICRCHIP
10186
2.415
Ande Electronics Co., Limited
JANTXV1N5811US
MICORCHIP
20
3.0975
Bonase Electronics (HK) Co., Limited
JANTXV1N5811US
MICRONCHIP
336
3.78
LYT (HONGKONG) CO., LIMITED