Part Number | NSBA114YDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Microchip |
Description | TRANS 2PNP PREBIAS 0.5W SOT563 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSBA114YDXV6T1G
MICROCIHIP
5308
1.73
HongKong Wanghua Technology Limited
NSBA114YDXV6T1G
MICROCH
9411
2.6175
Vegarton Electronic Limited
NSBA114YDXV6T1G
MICRCHIP
749
3.505
ZY (HK) TECHNOLOGY LIMITED
NSBA114YDXV6T1G
MICORCHIP
7751
4.3925
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSBA114YDXV6T1G
MICRONCHIP
8429
5.28
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