Description
Sep 27, 2011 SPA06N80C3 . CoolMOS. TM. Power Transistor. Features. New revolutionary high voltage technology. Extreme dv/dt rated. High peak 2. 3. Material Content Data Sheet. Sales Product Name. SPA06N80C3 . Issued. 27. July 2016. MA#. MA000452864. Package. PG-TO220-3-111. Weight*. SPA07N60CFD. SPA11N60CFD. SPA15N60CFD. SPA20N60CFD. SPA07N65C3. SPA11N65C3. SPA20N65C3. SPA02N80C3. SPA04N80C3. SPA06N80C3 . SPA06N80C3 . MOSFET, N-ch, 800V, 0.9 Ohms. TO-220V. SPA06N80C3 . Infineon Technologies. 1. R1. NC. Resistor, Chip, W, 1%. 0.300 X 0.100 inch Std. SPA06N80C3 . SPD06N80C3. SPD06N80C3. 650. SPP08N80C3. SPA08N80C3 . SPI08N80C3. 450. SPP11N80C3. SPA11N80C3. SPW11N80C3. 290.
Part Number | SPA06N80C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 800V 6A TO220FP |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |
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