Microchip

Description

DATASHEET STC04IE170HV . Monolithic emitter switched bipolar transistor. ESBT. . 1700 V - 4 A - 0.17 . Features. High voltage / high current cascode configuration. STC04IE170HV . 1. Introduction. The purpose of this application note is to explain the design of an 80 W 3-phase auxiliary power supply for motor drives and Nov 29, 2007 STEVAL-ISA015V2. 2/4. 1. Board schematic. Figure 1. Schematic. 12 t. 2.7. R. 11. 1N. 41484148. D. 7. 10. 0nF. C. 10. STC04IE170HV . Q. 1. The primary power switch is the STC04IE170HV . It is an ESBT rated for a maximum current of 5A and collector-to-source voltage of 1500V. The gate of the ESBT SMPS design based on L6565 and ESBT STC04IE170HV . In SMPS applications , where the load can vary, the current of the primary switch also fluctuates.