Description
PCN_JAON-18GURQ920. CATALOG_PART_NBR. 2N7002-G. DN3135K1-G. TN2106K1 - G . TN2124K1-G. TN2130K1-G. TP0610T-G. TP2104K1-G. VN2110K1 - TN2106K1 - G . TN2124K1-G. TN2124K1-G-D545. TN2130K1-G. TN5325K1-G. TN5335K1-G. TN5335K1-G-D589 TP5335K1-G-D588 VP2110K1-G-D537. TN2106K1 - G . TN2124K1-G. TN2124K1-G-D545. TN2130K1-G. TN5325K1-G. TN5335K1-G. TN5335K1-G-D589 TP5335K1-G-D588 VP2110K1-G-D537. 2N7000-G-D596 TD9944TG-G-D590. TN0104N3-G. TN0104N3-G-P003. TN0104N3-G-P014 TN0106N3-G-P013 TN0110N3-G-P002 TN2106K1 - G .
Part Number | TN2106K1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microchip |
Description | MOSFET N-CH 60V 280MA SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 280mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
TN2106K1-G
MICRONCHIP
15000
4.58
Junzhan Electronic (HK) Limited
TN2106K1-G
MICROCIHIP
20000
0.96
Ariel Electronic Technology Co., Limited
TN2106K1-G
MICROCH
15320
1.865
HK HEQING ELECTRONICS LIMITED
TN2106K1-G
MICRCHIP
3900
2.77
Gallop Great Holdings (Hong Kong) Limited
TN2106K1-G
MICORCHIP
5216
3.675
Belt (HK) Electronics Co